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IXFN66N50Q2

IXFN66N50Q2

For Reference Only

Part Number IXFN66N50Q2
PNEDA Part # IXFN66N50Q2
Description MOSFET N-CH 500V 66A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,730
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 13 - Mar 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN66N50Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN66N50Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN66N50Q2, IXFN66N50Q2 Datasheet (Total Pages: 5, Size: 148.27 KB)
PDFIXFN66N50Q2 Datasheet Cover
IXFN66N50Q2 Datasheet Page 2 IXFN66N50Q2 Datasheet Page 3 IXFN66N50Q2 Datasheet Page 4 IXFN66N50Q2 Datasheet Page 5

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IXFN66N50Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs199nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)735W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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