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IXFN320N17T2

IXFN320N17T2

For Reference Only

Part Number IXFN320N17T2
PNEDA Part # IXFN320N17T2
Description MOSFET N-CH 170V 260A SOT227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,408
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN320N17T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN320N17T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN320N17T2, IXFN320N17T2 Datasheet (Total Pages: 6, Size: 178.53 KB)
PDFIXFN320N17T2 Datasheet Cover
IXFN320N17T2 Datasheet Page 2 IXFN320N17T2 Datasheet Page 3 IXFN320N17T2 Datasheet Page 4 IXFN320N17T2 Datasheet Page 5 IXFN320N17T2 Datasheet Page 6

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IXFN320N17T2 Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)170V
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs640nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds45000pF @ 25V
FET Feature-
Power Dissipation (Max)1070W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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