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IXFN26N120P

IXFN26N120P

For Reference Only

Part Number IXFN26N120P
PNEDA Part # IXFN26N120P
Description MOSFET N-CH 1200V 23A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN26N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN26N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN26N120P, IXFN26N120P Datasheet (Total Pages: 4, Size: 125.19 KB)
PDFIXFN26N120P Datasheet Cover
IXFN26N120P Datasheet Page 2 IXFN26N120P Datasheet Page 3 IXFN26N120P Datasheet Page 4

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IXFN26N120P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs460mOhm @ 13A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs225nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds14000pF @ 25V
FET Feature-
Power Dissipation (Max)695W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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