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IXFN170N30P

IXFN170N30P

For Reference Only

Part Number IXFN170N30P
PNEDA Part # IXFN170N30P
Description MOSFET N-CH 300V 138A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,410
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN170N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN170N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN170N30P, IXFN170N30P Datasheet (Total Pages: 5, Size: 113.98 KB)
PDFIXFN170N30P Datasheet Cover
IXFN170N30P Datasheet Page 2 IXFN170N30P Datasheet Page 3 IXFN170N30P Datasheet Page 4 IXFN170N30P Datasheet Page 5

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IXFN170N30P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C138A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 85A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs258nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20000pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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