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IXFN102N30P

IXFN102N30P

For Reference Only

Part Number IXFN102N30P
PNEDA Part # IXFN102N30P
Description MOSFET N-CH 300V 88A SOT227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,816
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN102N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN102N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN102N30P, IXFN102N30P Datasheet (Total Pages: 2, Size: 116.66 KB)
PDFIXFN102N30P Datasheet Cover
IXFN102N30P Datasheet Page 2

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IXFN102N30P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs224nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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