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IXFK360N10T

IXFK360N10T

For Reference Only

Part Number IXFK360N10T
PNEDA Part # IXFK360N10T
Description MOSFET N-CH 100V 360A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK360N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK360N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK360N10T, IXFK360N10T Datasheet (Total Pages: 6, Size: 182.9 KB)
PDFIXFK360N10T Datasheet Cover
IXFK360N10T Datasheet Page 2 IXFK360N10T Datasheet Page 3 IXFK360N10T Datasheet Page 4 IXFK360N10T Datasheet Page 5 IXFK360N10T Datasheet Page 6

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IXFK360N10T Specifications

ManufacturerIXYS
SeriesGigaMOS™ HiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C360A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs525nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds33000pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

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