IXFK16N90Q
For Reference Only
| Part Number | IXFK16N90Q |
| PNEDA Part # | IXFK16N90Q |
| Description | MOSFET N-CH 900V 16A TO-264AA |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 6,462 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXFK16N90Q Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXFK16N90Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IXFK16N90Q Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) |
| Package / Case | TO-264-3, TO-264AA |
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 189nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11250pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 250W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 150A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
