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IXFI7N80P

IXFI7N80P

For Reference Only

Part Number IXFI7N80P
PNEDA Part # IXFI7N80P
Description MOSFET N-CH 800V 7A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,022
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFI7N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFI7N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFI7N80P, IXFI7N80P Datasheet (Total Pages: 4, Size: 140.62 KB)
PDFIXFI7N80P Datasheet Cover
IXFI7N80P Datasheet Page 2 IXFI7N80P Datasheet Page 3 IXFI7N80P Datasheet Page 4

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IXFI7N80P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.44Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1890pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262 (I2PAK)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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