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IXFH6N120P

IXFH6N120P

For Reference Only

Part Number IXFH6N120P
PNEDA Part # IXFH6N120P
Description MOSFET N-CH 1200V 6A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,718
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 1 - Apr 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH6N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH6N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH6N120P, IXFH6N120P Datasheet (Total Pages: 5, Size: 172.52 KB)
PDFIXFH6N120P Datasheet Cover
IXFH6N120P Datasheet Page 2 IXFH6N120P Datasheet Page 3 IXFH6N120P Datasheet Page 4 IXFH6N120P Datasheet Page 5

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IXFH6N120P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2830pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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