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IXFH67N10Q

IXFH67N10Q

For Reference Only

Part Number IXFH67N10Q
PNEDA Part # IXFH67N10Q
Description MOSFET N-CH 100V 67A TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH67N10Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH67N10Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH67N10Q, IXFH67N10Q Datasheet (Total Pages: 4, Size: 94.18 KB)
PDFIXFH67N10Q Datasheet Cover
IXFH67N10Q Datasheet Page 2 IXFH67N10Q Datasheet Page 3 IXFH67N10Q Datasheet Page 4

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IXFH67N10Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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