Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFH36N60P

IXFH36N60P

For Reference Only

Part Number IXFH36N60P
PNEDA Part # IXFH36N60P
Description MOSFET N-CH 600V 36A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,010
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH36N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH36N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH36N60P, IXFH36N60P Datasheet (Total Pages: 4, Size: 268.72 KB)
PDFIXFK36N60P Datasheet Cover
IXFK36N60P Datasheet Page 2 IXFK36N60P Datasheet Page 3 IXFK36N60P Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFH36N60P Datasheet
  • where to find IXFH36N60P
  • IXYS

  • IXYS IXFH36N60P
  • IXFH36N60P PDF Datasheet
  • IXFH36N60P Stock

  • IXFH36N60P Pinout
  • Datasheet IXFH36N60P
  • IXFH36N60P Supplier

  • IXYS Distributor
  • IXFH36N60P Price
  • IXFH36N60P Distributor

IXFH36N60P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5800pF @ 25V
FET Feature-
Power Dissipation (Max)650W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

The Products You May Be Interested In

IXFN55N50

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

625W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

IPS65R650CEAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

10.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

FET Feature

-

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

HUFA76432S3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 59A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1765pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQP30N06L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1040pF @ 25V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

720mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP1

Package / Case

SP1

Recently Sold

MBR0540T1G

MBR0540T1G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA SOD123

ADM211ARSZ-REEL

ADM211ARSZ-REEL

Analog Devices

IC TRANSCEIVER FULL 4/5 28SSOP

TAJE107M025RNJ

TAJE107M025RNJ

CAP TANT 100UF 20% 25V 2917

SD101CW-7-F

SD101CW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD123

RB551V-30-TP

RB551V-30-TP

Micro Commercial Co

DIODE SCHOTTKY 20V 500MA SOD323

TIP42CTU

TIP42CTU

ON Semiconductor

TRANS PNP 100V 6A TO-220

LTM8074IY#PBF

LTM8074IY#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 1.2A 25BGA

LTST-S310F2KT

LTST-S310F2KT

Lite-On Inc.

LED RGB CLEAR SMD R/A

LM7824ACT

LM7824ACT

ON Semiconductor

IC REG LINEAR 24V 1A TO220-3

ATMEGA162-16PU

ATMEGA162-16PU

Microchip Technology

IC MCU 8BIT 16KB FLASH 40DIP

ERJ-M1WSF20MU

ERJ-M1WSF20MU

Panasonic Electronic Components

RES 0.02 OHM 1% 1W 2512

NC7WZ16P6X

NC7WZ16P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6