IXFH36N55Q
For Reference Only
| Part Number | IXFH36N55Q |
| PNEDA Part # | IXFH36N55Q |
| Description | MOSFET N-CH 550V 36A TO-247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 6,264 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXFH36N55Q Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXFH36N55Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFH36N55Q Datasheet
- where to find IXFH36N55Q
- IXYS
- IXYS IXFH36N55Q
- IXFH36N55Q PDF Datasheet
- IXFH36N55Q Stock
- IXFH36N55Q Pinout
- Datasheet IXFH36N55Q
- IXFH36N55Q Supplier
- IXYS Distributor
- IXFH36N55Q Price
- IXFH36N55Q Distributor
IXFH36N55Q Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 550V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 128nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) |
| Package / Case | TO-247-3 |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 12.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 10V FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT6 (SC-95) Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 49W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 35mOhm @ 6.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.14W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 15V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
