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IXFH35N30Q

IXFH35N30Q

For Reference Only

Part Number IXFH35N30Q
PNEDA Part # IXFH35N30Q
Description MOSFET N-CH 300V 35A TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH35N30Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH35N30Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH35N30Q, IXFH35N30Q Datasheet (Total Pages: 4, Size: 168.12 KB)
PDFIXFH35N30Q Datasheet Cover
IXFH35N30Q Datasheet Page 2 IXFH35N30Q Datasheet Page 3 IXFH35N30Q Datasheet Page 4

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IXFH35N30Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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