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IXFH23N80Q

IXFH23N80Q

For Reference Only

Part Number IXFH23N80Q
PNEDA Part # IXFH23N80Q
Description MOSFET N-CH 800V 23A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH23N80Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH23N80Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH23N80Q, IXFH23N80Q Datasheet (Total Pages: 5, Size: 579.63 KB)
PDFIXFT23N80Q Datasheet Cover
IXFT23N80Q Datasheet Page 2 IXFT23N80Q Datasheet Page 3 IXFT23N80Q Datasheet Page 4 IXFT23N80Q Datasheet Page 5

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IXFH23N80Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4900pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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