Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFH23N60Q

IXFH23N60Q

For Reference Only

Part Number IXFH23N60Q
PNEDA Part # IXFH23N60Q
Description MOSFET N-CH 600V 23A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 18 - Nov 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH23N60Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH23N60Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH23N60Q, IXFH23N60Q Datasheet (Total Pages: 4, Size: 574.32 KB)
PDFIXFH23N60Q Datasheet Cover
IXFH23N60Q Datasheet Page 2 IXFH23N60Q Datasheet Page 3 IXFH23N60Q Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFH23N60Q Datasheet
  • where to find IXFH23N60Q
  • IXYS

  • IXYS IXFH23N60Q
  • IXFH23N60Q PDF Datasheet
  • IXFH23N60Q Stock

  • IXFH23N60Q Pinout
  • Datasheet IXFH23N60Q
  • IXFH23N60Q Supplier

  • IXYS Distributor
  • IXFH23N60Q Price
  • IXFH23N60Q Distributor

IXFH23N60Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

The Products You May Be Interested In

IRFSL31N20DTRL

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2370pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRF3711STRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2980pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AOY528

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251B

Package / Case

TO-251-3 Stub Leads, IPak

JAN2N6790U

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/555

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

800mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

18-ULCC (9.14x7.49)

Package / Case

18-CLCC

TPC8022-H(TE12LQ,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

27mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP (5.5x6.0)

Package / Case

8-SOIC (0.173", 4.40mm Width)

Recently Sold

YC324-JK-0710KL

YC324-JK-0710KL

Yageo

RES ARRAY 4 RES 10K OHM 2012

NFA31GD1014704D

NFA31GD1014704D

Murata

FILTER RC 47 OHM/100PF SMD

BC846B

BC846B

ON Semiconductor

TRANS NPN 65V 0.1A SOT-23

MT25QU256ABA8ESF-0SIT

MT25QU256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

CY7C68013A-128AXC

CY7C68013A-128AXC

Cypress Semiconductor

IC MCU USB PERIPH HI SPD 128LQFP

C8051F326-GM

C8051F326-GM

Silicon Labs

IC MCU 8BIT 16KB FLASH 28QFN

FDS9431A

FDS9431A

ON Semiconductor

MOSFET P-CH 20V 3.5A 8SOIC

MIC29302BU

MIC29302BU

Microchip Technology

IC REG LINEAR POS ADJ 3A TO263-5

B350B-13-F

B350B-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMB

MOCD217M

MOCD217M

ON Semiconductor

OPTOISO 2.5KV 2CH TRANS 8SOIC

C3M0065090D

C3M0065090D

Cree/Wolfspeed

MOSFET N-CH 900V 36A TO247-3

CY7C68013A-100AXC

CY7C68013A-100AXC

Cypress Semiconductor

IC MCU USB PERIPH HI SPD 100LQFP