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IXEH25N120

IXEH25N120

For Reference Only

Part Number IXEH25N120
PNEDA Part # IXEH25N120
Description IGBT 1200V 36A 200W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,024
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXEH25N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXEH25N120
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXEH25N120, IXEH25N120 Datasheet (Total Pages: 4, Size: 84.98 KB)
PDFIXEH25N120D1 Datasheet Cover
IXEH25N120D1 Datasheet Page 2 IXEH25N120D1 Datasheet Page 3 IXEH25N120D1 Datasheet Page 4

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IXEH25N120 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)36A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 25A
Power - Max200W
Switching Energy4.1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C-
Test Condition600V, 20A, 68Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-247AD

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

250W

Switching Energy

490µJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

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Test Condition

960V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

Automotive, AEC-Q101, EcoSPARK®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

250V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

800ns/5.1µs

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252

IRGC14C40LD

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

430V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.65V @ 4.5V, 10A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

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Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

65A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 40A

Power - Max

148W

Switching Energy

1.11mJ (on), 1.68mJ (off)

Input Type

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Gate Charge

98nC

Td (on/off) @ 25°C

53ns/227ns

Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

58ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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