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IXBH16N170A

IXBH16N170A

For Reference Only

Part Number IXBH16N170A
PNEDA Part # IXBH16N170A
Description IGBT 1700V 16A 150W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,816
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBH16N170A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBH16N170A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBH16N170A, IXBH16N170A Datasheet (Total Pages: 2, Size: 51.85 KB)
PDFIXBT16N170A Datasheet Cover
IXBT16N170A Datasheet Page 2

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IXBH16N170A Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)16A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic6V @ 15V, 10A
Power - Max150W
Switching Energy1.2mJ (off)
Input TypeStandard
Gate Charge65nC
Td (on/off) @ 25°C15ns/160ns
Test Condition1360V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)360ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXBH)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 10A, 30Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

52µJ (on), 231µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 11A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Test Condition

400V, 4A, 48Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

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TO-220-3

Supplier Device Package

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Series

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

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Power - Max

75W

Switching Energy

120µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

10ns/65ns

Test Condition

480V, 7A, 18Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

IRGP4790PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

140A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 75A

Power - Max

455W

Switching Energy

2.5mJ (on), 2.2mJ (off)

Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

50ns/200ns

Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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