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IXA4I1200UC-TRL

IXA4I1200UC-TRL

For Reference Only

Part Number IXA4I1200UC-TRL
PNEDA Part # IXA4I1200UC-TRL
Description IGBT 1200V 9A 45W TO252AA
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,114
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXA4I1200UC-TRL Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXA4I1200UC-TRL
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXA4I1200UC-TRL, IXA4I1200UC-TRL Datasheet (Total Pages: 4, Size: 95.03 KB)
PDFIXA4I1200UC-TRL Datasheet Cover
IXA4I1200UC-TRL Datasheet Page 2 IXA4I1200UC-TRL Datasheet Page 3 IXA4I1200UC-TRL Datasheet Page 4

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IXA4I1200UC-TRL Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)9A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 3A
Power - Max45W
Switching Energy400µJ (on), 300µJ (off)
Input TypeStandard
Gate Charge12nC
Td (on/off) @ 25°C-
Test Condition600V, 3A, 330Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

190W

Switching Energy

2.1mJ (off)

Input Type

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Gate Charge

72nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Power - Max

378W

Switching Energy

1.97mJ (on), 570µJ (off)

Input Type

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Gate Charge

188nC

Td (on/off) @ 25°C

26ns/134ns

Test Condition

400V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

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Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Power - Max

150W

Switching Energy

160µJ (on), 90µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

16ns/75ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

IRG4BC30F

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

230µJ (on), 1.18mJ (off)

Input Type

Standard

Gate Charge

51nC

Td (on/off) @ 25°C

21ns/200ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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Microsemi

Manufacturer

Microsemi Corporation

Series

Thunderbolt IGBT®

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

42A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 15A

Power - Max

184W

Switching Energy

150µJ (on), 215µJ (off)

Input Type

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Gate Charge

75nC

Td (on/off) @ 25°C

6ns/105ns

Test Condition

400V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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