Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ISP06P005LSATMA1

ISP06P005LSATMA1

For Reference Only

Part Number ISP06P005LSATMA1
PNEDA Part # ISP06P005LSATMA1
Description MOSFET P-CH SOT223-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,192
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ISP06P005LSATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberISP06P005LSATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ISP06P005LSATMA1 Datasheet
  • where to find ISP06P005LSATMA1
  • Infineon Technologies

  • Infineon Technologies ISP06P005LSATMA1
  • ISP06P005LSATMA1 PDF Datasheet
  • ISP06P005LSATMA1 Stock

  • ISP06P005LSATMA1 Pinout
  • Datasheet ISP06P005LSATMA1
  • ISP06P005LSATMA1 Supplier

  • Infineon Technologies Distributor
  • ISP06P005LSATMA1 Price
  • ISP06P005LSATMA1 Distributor

ISP06P005LSATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-3

The Products You May Be Interested In

DMPH6250SQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

155mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

512pF @ 30V

FET Feature

-

Power Dissipation (Max)

920mW

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

IPD80R750P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

3.5V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 500V

FET Feature

-

Power Dissipation (Max)

51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPA60R360P7SXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

555pF @ 400V

FET Feature

-

Power Dissipation (Max)

22W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

STW34N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 100V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

DMN6040SVT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

44mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1287pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSOT-26

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

SP0503BAHT

SP0503BAHT

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

T491B106K025AT

T491B106K025AT

KEMET

CAP TANT 10UF 10% 25V 1411

TZB4R500AB10R00

TZB4R500AB10R00

Murata

CAP TRIMMER 7-50PF 50V SMD

RCLAMP0502BATCT

RCLAMP0502BATCT

Semtech

TVS DIODE 5V 25V SC75

OP2177ARMZ-REEL

OP2177ARMZ-REEL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

3224W-1-502E

3224W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

ADM3260ARSZ

ADM3260ARSZ

Analog Devices

DGTL ISO 2.5KV 2CH I2C 20SSOP

ST62T65CM6

ST62T65CM6

STMicroelectronics

IC MCU 8BIT 3.8KB OTP 28SOIC

PG1112H-TR

PG1112H-TR

Stanley Electric Co

LED GREEN DIFFUSED 2125 SMD

NAND256W3A2BZA6E

NAND256W3A2BZA6E

Micron Technology Inc.

IC FLASH 256M PARALLEL 55VFBGA

74LCX125MTC

74LCX125MTC

ON Semiconductor

IC BUF NON-INVERT 3.6V 14TSSOP