ISL9R8120S3ST
For Reference Only
| Part Number | ISL9R8120S3ST |
| PNEDA Part # | ISL9R8120S3ST |
| Description | DIODE GEN PURP 1.2KV 8A TO263 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,808 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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ISL9R8120S3ST Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | ISL9R8120S3ST |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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- Delivery date: usually 2 to 7 working days.
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ISL9R8120S3ST Specifications
| Manufacturer | ON Semiconductor |
| Series | Stealth™ |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 3.3V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 300ns |
| Current - Reverse Leakage @ Vr | 100µA @ 1200V |
| Capacitance @ Vr, F | 30pF @ 10V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
| Operating Temperature - Junction | -55°C ~ 150°C |
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