IS43DR86400E-25DBLI
For Reference Only
| Part Number | IS43DR86400E-25DBLI |
| PNEDA Part # | IS43DR86400E-25DBLI |
| Description | IC DRAM 512M PARALLEL 60TWBGA |
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Unit Price | Request a Quote |
| In Stock | 8,442 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IS43DR86400E-25DBLI Resources
| Brand | ISSI, Integrated Silicon Solution Inc |
| ECAD Module |
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| Mfr. Part Number | IS43DR86400E-25DBLI |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IS43DR86400E-25DBLI Specifications
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mb (64M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 400MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-TWBGA (8x10.5) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 144Kb (8K x 18) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 15ns Access Time 15ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
