IS42RM32160C-75BL
For Reference Only
| Part Number | IS42RM32160C-75BL |
| PNEDA Part # | IS42RM32160C-75BL |
| Description | IC DRAM 512M PARALLEL 90WBGA |
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Unit Price | Request a Quote |
| In Stock | 5,814 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IS42RM32160C-75BL Resources
| Brand | ISSI, Integrated Silicon Solution Inc |
| ECAD Module |
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| Mfr. Part Number | IS42RM32160C-75BL |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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IS42RM32160C-75BL Specifications
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 133MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5.4ns |
| Voltage - Supply | 2.3V ~ 3V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-LFBGA |
| Supplier Device Package | 90-WBGA (8x13) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
