Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR3303TRR

IRLR3303TRR

For Reference Only

Part Number IRLR3303TRR
PNEDA Part # IRLR3303TRR
Description MOSFET N-CH 30V 35A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR3303TRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR3303TRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLR3303TRR, IRLR3303TRR Datasheet (Total Pages: 11, Size: 144.46 KB)
PDFIRLR3303TRR Datasheet Cover
IRLR3303TRR Datasheet Page 2 IRLR3303TRR Datasheet Page 3 IRLR3303TRR Datasheet Page 4 IRLR3303TRR Datasheet Page 5 IRLR3303TRR Datasheet Page 6 IRLR3303TRR Datasheet Page 7 IRLR3303TRR Datasheet Page 8 IRLR3303TRR Datasheet Page 9 IRLR3303TRR Datasheet Page 10 IRLR3303TRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR3303TRR Datasheet
  • where to find IRLR3303TRR
  • Infineon Technologies

  • Infineon Technologies IRLR3303TRR
  • IRLR3303TRR PDF Datasheet
  • IRLR3303TRR Stock

  • IRLR3303TRR Pinout
  • Datasheet IRLR3303TRR
  • IRLR3303TRR Supplier

  • Infineon Technologies Distributor
  • IRLR3303TRR Price
  • IRLR3303TRR Distributor

IRLR3303TRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 21A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

NVMFS5A160PLZWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7700pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

TK100E06N1,S1X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 30V

FET Feature

-

Power Dissipation (Max)

255W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRFU3607-701PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3070pF @ 50V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

I-PAK (LF701)

Package / Case

TO-252-4, DPak (3 Leads + Tab)

IRF520NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

NDD03N40ZT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

2.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4Ohm @ 600mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 50V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

MMBD7000LT1G

MMBD7000LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

595D336X0035R2T

595D336X0035R2T

Vishay Sprague

CAP TANT 33UF 20% 35V 2824

HCPL-0601

HCPL-0601

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

ADR291GRZ

ADR291GRZ

Analog Devices

IC VREF SERIES 2.5V 8SOIC

EP5358HUI

EP5358HUI

Intel

DC DC CONVERTER 1.8-3.3V 2W

LTC3676HUJ-1#TRPBF

LTC3676HUJ-1#TRPBF

Linear Technology/Analog Devices

IC REG CONV I.MX6 7OUT 40QFN

W25Q80DVSVIG

W25Q80DVSVIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8VSOP

DLW5BSN191SQ2L

DLW5BSN191SQ2L

Murata

CMC 5A 2LN 190 OHM SMD

IHLP2525CZER220M5A

IHLP2525CZER220M5A

Vishay Dale

FIXED IND 22UH 2.8A 174 MOHM SMD

S34ML08G101BHI000

S34ML08G101BHI000

SkyHigh Memory Limited

IC FLASH 8G PARALLEL 63BGA

MAX3295AUT+T

MAX3295AUT+T

Maxim Integrated

IC DRIVER 1/0 SOT23-6

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD