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IRLMS1902TR

IRLMS1902TR

For Reference Only

Part Number IRLMS1902TR
PNEDA Part # IRLMS1902TR
Description MOSFET N-CH 20V 3.2A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLMS1902TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLMS1902TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLMS1902TR, IRLMS1902TR Datasheet (Total Pages: 8, Size: 187.63 KB)
PDFIRLMS1902TR Datasheet Cover
IRLMS1902TR Datasheet Page 2 IRLMS1902TR Datasheet Page 3 IRLMS1902TR Datasheet Page 4 IRLMS1902TR Datasheet Page 5 IRLMS1902TR Datasheet Page 6 IRLMS1902TR Datasheet Page 7 IRLMS1902TR Datasheet Page 8

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IRLMS1902TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 15V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6

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