IRLHM630TR2PBF
For Reference Only
| Part Number | IRLHM630TR2PBF |
| PNEDA Part # | IRLHM630TR2PBF |
| Description | MOSFET N-CH 30V 21A PQFN |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,894 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRLHM630TR2PBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRLHM630TR2PBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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IRLHM630TR2PBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (3x3) |
| Package / Case | 8-VQFN Exposed Pad |
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