IRLD120PBF
![IRLD120PBF](http://pneda.ltd/static/products/images_mk/402/IRLD120PBF.webp)
For Reference Only
Part Number | IRLD120PBF |
PNEDA Part # | IRLD120PBF |
Description | MOSFET N-CH 100V 1.3A 4-DIP |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 105,126 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRLD120PBF Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | IRLD120PBF |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IRLD120PBF Specifications
Manufacturer | Vishay Siliconix |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
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