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IRL7472L1TRPBF

IRL7472L1TRPBF

For Reference Only

Part Number IRL7472L1TRPBF
PNEDA Part # IRL7472L1TRPBF
Description MOSFET N-CH 40V 375A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL7472L1TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL7472L1TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL7472L1TRPBF, IRL7472L1TRPBF Datasheet (Total Pages: 12, Size: 527.46 KB)
PDFIRL7472L1TRPBF Datasheet Cover
IRL7472L1TRPBF Datasheet Page 2 IRL7472L1TRPBF Datasheet Page 3 IRL7472L1TRPBF Datasheet Page 4 IRL7472L1TRPBF Datasheet Page 5 IRL7472L1TRPBF Datasheet Page 6 IRL7472L1TRPBF Datasheet Page 7 IRL7472L1TRPBF Datasheet Page 8 IRL7472L1TRPBF Datasheet Page 9 IRL7472L1TRPBF Datasheet Page 10 IRL7472L1TRPBF Datasheet Page 11

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IRL7472L1TRPBF Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.59mOhm @ 195A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs330nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20082pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 341W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET L8
Package / CaseDirectFET™ Isometric L8

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