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IRL3303STRRPBF

IRL3303STRRPBF

For Reference Only

Part Number IRL3303STRRPBF
PNEDA Part # IRL3303STRRPBF
Description MOSFET N-CH 30V 38A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL3303STRRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL3303STRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL3303STRRPBF, IRL3303STRRPBF Datasheet (Total Pages: 11, Size: 292.71 KB)
PDFIRL3303STRLPBF Datasheet Cover
IRL3303STRLPBF Datasheet Page 2 IRL3303STRLPBF Datasheet Page 3 IRL3303STRLPBF Datasheet Page 4 IRL3303STRLPBF Datasheet Page 5 IRL3303STRLPBF Datasheet Page 6 IRL3303STRLPBF Datasheet Page 7 IRL3303STRLPBF Datasheet Page 8 IRL3303STRLPBF Datasheet Page 9 IRL3303STRLPBF Datasheet Page 10 IRL3303STRLPBF Datasheet Page 11

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IRL3303STRRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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