Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRL3103D1PBF

IRL3103D1PBF

For Reference Only

Part Number IRL3103D1PBF
PNEDA Part # IRL3103D1PBF
Description MOSFET N-CH 30V 64A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,924
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL3103D1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL3103D1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL3103D1PBF, IRL3103D1PBF Datasheet (Total Pages: 7, Size: 324.76 KB)
PDFIRL3103D1PBF Datasheet Cover
IRL3103D1PBF Datasheet Page 2 IRL3103D1PBF Datasheet Page 3 IRL3103D1PBF Datasheet Page 4 IRL3103D1PBF Datasheet Page 5 IRL3103D1PBF Datasheet Page 6 IRL3103D1PBF Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRL3103D1PBF Datasheet
  • where to find IRL3103D1PBF
  • Infineon Technologies

  • Infineon Technologies IRL3103D1PBF
  • IRL3103D1PBF PDF Datasheet
  • IRL3103D1PBF Stock

  • IRL3103D1PBF Pinout
  • Datasheet IRL3103D1PBF
  • IRL3103D1PBF Supplier

  • Infineon Technologies Distributor
  • IRL3103D1PBF Price
  • IRL3103D1PBF Distributor

IRL3103D1PBF Specifications

ManufacturerInfineon Technologies
SeriesFETKY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 34A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
FET Feature-
Power Dissipation (Max)2W (Ta), 89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

2N7639-GA

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

FET Type

-

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15A (Tc) (155°C)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

105mOhm @ 15A

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

1534pF @ 35V

FET Feature

-

Power Dissipation (Max)

172W (Tc)

Operating Temperature

-55°C ~ 225°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-257

Package / Case

TO-257-3

IRF7488PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

6.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

29mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1680pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

APTM10DAM05TG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

278A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 125A, 10V

Vgs(th) (Max) @ Id

4V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

700nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

20000pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP4

Package / Case

SP4

DMP1045UFY4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

32mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23.7nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1291pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

-

Package / Case

3-XFDFN

BUK9510-100B,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

11045pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

STPS1H100A

STPS1H100A

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMA

742792410

742792410

Wurth Electronics

FERRITE BEAD 60 OHM 1806 1LN

1812L160/12DR

1812L160/12DR

Littelfuse

PTC RESET FUSE 12V 1.6A 1812

C8051F340-GQ

C8051F340-GQ

Silicon Labs

IC MCU 8BIT 64KB FLASH 48TQFP

BC81725MTF

BC81725MTF

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

AD842KQ

AD842KQ

Analog Devices

IC OPAMP GP 1 CIRCUIT 14CERDIP

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

SSM2166SZ

SSM2166SZ

Analog Devices

IC PREAMP AUDIO MONO MIC 14SOIC

NUP2201MR6T1G

NUP2201MR6T1G

ON Semiconductor

TVS DIODE 5V 20V 6TSOP

CM1213-08MR

CM1213-08MR

ON Semiconductor

TVS DIODE 3.3V 8.8V 10MSOP