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IRL2910L

IRL2910L

For Reference Only

Part Number IRL2910L
PNEDA Part # IRL2910L
Description MOSFET N-CH 100V 55A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL2910L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL2910L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL2910L, IRL2910L Datasheet (Total Pages: 11, Size: 338.21 KB)
PDFIRL2910STRL Datasheet Cover
IRL2910STRL Datasheet Page 2 IRL2910STRL Datasheet Page 3 IRL2910STRL Datasheet Page 4 IRL2910STRL Datasheet Page 5 IRL2910STRL Datasheet Page 6 IRL2910STRL Datasheet Page 7 IRL2910STRL Datasheet Page 8 IRL2910STRL Datasheet Page 9 IRL2910STRL Datasheet Page 10 IRL2910STRL Datasheet Page 11

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IRL2910L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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