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IRGSL15B60KDPBF

IRGSL15B60KDPBF

For Reference Only

Part Number IRGSL15B60KDPBF
PNEDA Part # IRGSL15B60KDPBF
Description IGBT 600V 31A 208W TO262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,150
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGSL15B60KDPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGSL15B60KDPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGSL15B60KDPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)31A
Current - Collector Pulsed (Icm)62A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Power - Max208W
Switching Energy220µJ (on), 340µJ (off)
Input TypeStandard
Gate Charge56nC
Td (on/off) @ 25°C34ns/184ns
Test Condition400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr)92ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackagePG-TO262-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

490µJ (on), 160µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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