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IRGB4061DPBF

IRGB4061DPBF

For Reference Only

Part Number IRGB4061DPBF
PNEDA Part # IRGB4061DPBF
Description IGBT 600V 36A 206W TO220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 8 - Apr 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGB4061DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGB4061DPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRGB4061DPBF, IRGB4061DPBF Datasheet (Total Pages: 10, Size: 404.77 KB)
PDFIRGB4061DPBF Datasheet Cover
IRGB4061DPBF Datasheet Page 2 IRGB4061DPBF Datasheet Page 3 IRGB4061DPBF Datasheet Page 4 IRGB4061DPBF Datasheet Page 5 IRGB4061DPBF Datasheet Page 6 IRGB4061DPBF Datasheet Page 7 IRGB4061DPBF Datasheet Page 8 IRGB4061DPBF Datasheet Page 9 IRGB4061DPBF Datasheet Page 10

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IRGB4061DPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)36A
Current - Collector Pulsed (Icm)72A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 18A
Power - Max206W
Switching Energy95µJ (on), 350µJ (off)
Input TypeStandard
Gate Charge35nC
Td (on/off) @ 25°C40ns/105ns
Test Condition400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr)100ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

1200A

Vce(on) (Max) @ Vge, Ic

1.15V @ 15V, 100A

Power - Max

1000W

Switching Energy

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Input Type

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Gate Charge

560nC

Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Supplier Device Package

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IRGB4B60KPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 4A

Power - Max

63W

Switching Energy

130µJ (on), 83µJ (off)

Input Type

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Gate Charge

12nC

Td (on/off) @ 25°C

22ns/100ns

Test Condition

400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

400W

Switching Energy

4.7mJ (off)

Input Type

Standard

Gate Charge

135nC

Td (on/off) @ 25°C

20ns/350ns

Test Condition

-

Reverse Recovery Time (trr)

200ns

Operating Temperature

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Mounting Type

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Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

STGD18N40LZ-1

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

420V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

1.7V @ 4.5V, 10A

Power - Max

125W

Switching Energy

-

Input Type

Logic

Gate Charge

29nC

Td (on/off) @ 25°C

650ns/13.5µs

Test Condition

300V, 10A, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

I-PAK

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