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IRG4RC10SDTRLP

IRG4RC10SDTRLP

For Reference Only

Part Number IRG4RC10SDTRLP
PNEDA Part # IRG4RC10SDTRLP
Description IGBT 600V 14A 38W DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG4RC10SDTRLP Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG4RC10SDTRLP
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG4RC10SDTRLP Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Current - Collector Pulsed (Icm)18A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 8A
Power - Max38W
Switching Energy310µJ (on), 3.28mJ (off)
Input TypeStandard
Gate Charge15nC
Td (on/off) @ 25°C76ns/815ns
Test Condition480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr)28ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak

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Test Condition

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

1.29mJ

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 11Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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