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IRG4BC10SD

IRG4BC10SD

For Reference Only

Part Number IRG4BC10SD
PNEDA Part # IRG4BC10SD
Description IGBT 600V 14A 38W TO220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG4BC10SD Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG4BC10SD
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG4BC10SD, IRG4BC10SD Datasheet (Total Pages: 10, Size: 313.86 KB)
PDFIRG4BC10SD Datasheet Cover
IRG4BC10SD Datasheet Page 2 IRG4BC10SD Datasheet Page 3 IRG4BC10SD Datasheet Page 4 IRG4BC10SD Datasheet Page 5 IRG4BC10SD Datasheet Page 6 IRG4BC10SD Datasheet Page 7 IRG4BC10SD Datasheet Page 8 IRG4BC10SD Datasheet Page 9 IRG4BC10SD Datasheet Page 10

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IRG4BC10SD Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Current - Collector Pulsed (Icm)18A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 8A
Power - Max38W
Switching Energy310µJ (on), 3.28mJ (off)
Input TypeStandard
Gate Charge15nC
Td (on/off) @ 25°C76ns/815ns
Test Condition480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr)28ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

127nC

Td (on/off) @ 25°C

46ns/284ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Power - Max

300W

Switching Energy

3mJ (off)

Input Type

Standard

Gate Charge

160nC

Td (on/off) @ 25°C

50ns/150ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IRG4BC10SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power - Max

38W

Switching Energy

140µJ (on), 2.58mJ (off)

Input Type

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Gate Charge

15nC

Td (on/off) @ 25°C

25ns/630ns

Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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