Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFZ48RPBF

IRFZ48RPBF

For Reference Only

Part Number IRFZ48RPBF
PNEDA Part # IRFZ48RPBF
Description MOSFET N-CH 60V 50A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFZ48RPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFZ48RPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFZ48RPBF, IRFZ48RPBF Datasheet (Total Pages: 9, Size: 1,136.46 KB)
PDFIRFZ48R Datasheet Cover
IRFZ48R Datasheet Page 2 IRFZ48R Datasheet Page 3 IRFZ48R Datasheet Page 4 IRFZ48R Datasheet Page 5 IRFZ48R Datasheet Page 6 IRFZ48R Datasheet Page 7 IRFZ48R Datasheet Page 8 IRFZ48R Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFZ48RPBF Datasheet
  • where to find IRFZ48RPBF
  • Vishay Siliconix

  • Vishay Siliconix IRFZ48RPBF
  • IRFZ48RPBF PDF Datasheet
  • IRFZ48RPBF Stock

  • IRFZ48RPBF Pinout
  • Datasheet IRFZ48RPBF
  • IRFZ48RPBF Supplier

  • Vishay Siliconix Distributor
  • IRFZ48RPBF Price
  • IRFZ48RPBF Distributor

IRFZ48RPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 43A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

STS7NF60L

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

19.5mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

BSZ040N04LSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 36µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

IPI90N06S404AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

190A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

1.3mOhm @ 90A, 5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

IRFR3706TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 10V

FET Feature

-

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

FDC5614P

FDC5614P

ON Semiconductor

MOSFET P-CH 60V 3A SSOT-6

IXFK44N80P

IXFK44N80P

IXYS

MOSFET N-CH 800V 44A TO-264

HA7-2645-5

HA7-2645-5

Renesas Electronics America Inc.

IC OPAMP GP 1 CIRCUIT 8CERDIP

ECA-2AM470

ECA-2AM470

Panasonic Electronic Components

CAP ALUM 47UF 20% 100V RADIAL

XCZU9EG-1FFVB1156I

XCZU9EG-1FFVB1156I

Xilinx

IC SOC CORTEX-A53 1156FCBGA

ADR421ARZ

ADR421ARZ

Analog Devices

IC VREF SERIES 2.5V 8SOIC

EPCQ64ASI16N

EPCQ64ASI16N

Intel

IC CONFIG DEVICE 64MBIT 16SOIC

OKL-T/6-W12P-C

OKL-T/6-W12P-C

Murata Power Solutions

DC DC CONVERTER 0.591-5.5V 30W

LT1783CS5#TRMPBF

LT1783CS5#TRMPBF

Linear Technology/Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT23-5

D1213A-04TS-7

D1213A-04TS-7

Diodes Incorporated

TVS DIODE 3.3V 10V TSOT-26

DS3232SN#

DS3232SN#

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917