Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFZ46NPBF

IRFZ46NPBF

For Reference Only

Part Number IRFZ46NPBF
PNEDA Part # IRFZ46NPBF
Description MOSFET N-CH 55V 53A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 12,978
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFZ46NPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFZ46NPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFZ46NPBF Datasheet
  • where to find IRFZ46NPBF
  • Infineon Technologies

  • Infineon Technologies IRFZ46NPBF
  • IRFZ46NPBF PDF Datasheet
  • IRFZ46NPBF Stock

  • IRFZ46NPBF Pinout
  • Datasheet IRFZ46NPBF
  • IRFZ46NPBF Supplier

  • Infineon Technologies Distributor
  • IRFZ46NPBF Price
  • IRFZ46NPBF Distributor

IRFZ46NPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1696pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

NP80N04PLG-E1B-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 115W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTR4170NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

55mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.76nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

432pF @ 15V

FET Feature

-

Power Dissipation (Max)

480mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

STW4N150

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1500V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

SI4630DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

161nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

6670pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 7.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

TSM2302CX RFG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

65mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

587pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

1SMB5925BT3G

1SMB5925BT3G

ON Semiconductor

DIODE ZENER 10V 3W SMB

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

AT89C51-24AI

AT89C51-24AI

Microchip Technology

IC MCU 8BIT 4KB FLASH 44TQFP

0501010.WR

0501010.WR

Littelfuse

FUSE BOARD MOUNT 10A 32VDC 1206

1014-12

1014-12

Microsemi

RF TRANS NPN 50V 1.4GHZ 55LT

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

MMSZ5250BT1G

MMSZ5250BT1G

ON Semiconductor

DIODE ZENER 20V 500MW SOD123

TJA1052IT/5Y

TJA1052IT/5Y

NXP

DGTL ISOLATOR 5KV 2CH CAN 16SO

MC9S08LG16CLF

MC9S08LG16CLF

NXP

IC MCU 8BIT 18KB FLASH 48LQFP