Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFU9310PBF

IRFU9310PBF

For Reference Only

Part Number IRFU9310PBF
PNEDA Part # IRFU9310PBF
Description MOSFET P-CH 400V 1.8A I-PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 17,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFU9310PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFU9310PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFU9310PBF, IRFU9310PBF Datasheet (Total Pages: 11, Size: 241.63 KB)
PDFIRFR9310TRRPBF Datasheet Cover
IRFR9310TRRPBF Datasheet Page 2 IRFR9310TRRPBF Datasheet Page 3 IRFR9310TRRPBF Datasheet Page 4 IRFR9310TRRPBF Datasheet Page 5 IRFR9310TRRPBF Datasheet Page 6 IRFR9310TRRPBF Datasheet Page 7 IRFR9310TRRPBF Datasheet Page 8 IRFR9310TRRPBF Datasheet Page 9 IRFR9310TRRPBF Datasheet Page 10 IRFR9310TRRPBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFU9310PBF Datasheet
  • where to find IRFU9310PBF
  • Vishay Siliconix

  • Vishay Siliconix IRFU9310PBF
  • IRFU9310PBF PDF Datasheet
  • IRFU9310PBF Stock

  • IRFU9310PBF Pinout
  • Datasheet IRFU9310PBF
  • IRFU9310PBF Supplier

  • Vishay Siliconix Distributor
  • IRFU9310PBF Price
  • IRFU9310PBF Distributor

IRFU9310PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251AA
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

SPS04N60C3BKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

3.9V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

STW30NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

IRFZ48RPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TSM160N10CZ C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

154nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9840pF @ 30V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

STWA70N60DM2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

42mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

5508pF @ 100V

FET Feature

-

Power Dissipation (Max)

446W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 Long Leads

Package / Case

TO-247-3

Recently Sold

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

ATXMEGA64A3U-AU

ATXMEGA64A3U-AU

Microchip Technology

IC MCU 8/16BIT 64KB FLASH 64TQFP

ADM211ARSZ-REEL

ADM211ARSZ-REEL

Analog Devices

IC TRANSCEIVER FULL 4/5 28SSOP

5M2210ZF256I5

5M2210ZF256I5

Intel

IC CPLD 1700MC 7NS 256FBGA

5KP30A

5KP30A

Littelfuse

TVS DIODE 30V 48.4V P600

BAT54CWT1G

BAT54CWT1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT323

VUB72-12NOXT

VUB72-12NOXT

IXYS

BRIDGE RECT 3P 1.2KV 75A V1A-PAK

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

CDSOT23-SM712

CDSOT23-SM712

Bourns

TVS DIODE 7V/12V 14V/26V SOT23-3

USB3320C-EZK-TR

USB3320C-EZK-TR

Microchip Technology

IC TRANSCEIVER HALF 1/1 32QFN

PIC16F18323-I/SL

PIC16F18323-I/SL

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14SOIC

LM258DT

LM258DT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO