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IRFU12N25DPBF

IRFU12N25DPBF

For Reference Only

Part Number IRFU12N25DPBF
PNEDA Part # IRFU12N25DPBF
Description MOSFET N-CH 250V 14A I-PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,914
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFU12N25DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFU12N25DPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFU12N25DPBF, IRFU12N25DPBF Datasheet (Total Pages: 11, Size: 225.51 KB)
PDFIRFR12N25DTRPBF Datasheet Cover
IRFR12N25DTRPBF Datasheet Page 2 IRFR12N25DTRPBF Datasheet Page 3 IRFR12N25DTRPBF Datasheet Page 4 IRFR12N25DTRPBF Datasheet Page 5 IRFR12N25DTRPBF Datasheet Page 6 IRFR12N25DTRPBF Datasheet Page 7 IRFR12N25DTRPBF Datasheet Page 8 IRFR12N25DTRPBF Datasheet Page 9 IRFR12N25DTRPBF Datasheet Page 10 IRFR12N25DTRPBF Datasheet Page 11

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IRFU12N25DPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds810pF @ 25V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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