Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFSL38N20DPBF

IRFSL38N20DPBF

For Reference Only

Part Number IRFSL38N20DPBF
PNEDA Part # IRFSL38N20DPBF
Description MOSFET N-CH 200V 43A TO-262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 16 - Apr 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL38N20DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFSL38N20DPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFSL38N20DPBF Datasheet
  • where to find IRFSL38N20DPBF
  • Infineon Technologies

  • Infineon Technologies IRFSL38N20DPBF
  • IRFSL38N20DPBF PDF Datasheet
  • IRFSL38N20DPBF Stock

  • IRFSL38N20DPBF Pinout
  • Datasheet IRFSL38N20DPBF
  • IRFSL38N20DPBF Supplier

  • Infineon Technologies Distributor
  • IRFSL38N20DPBF Price
  • IRFSL38N20DPBF Distributor

IRFSL38N20DPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

IRLU7821

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

174nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9700pF @ 25V

FET Feature

-

Power Dissipation (Max)

577W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

APT77N60BC6

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 44.4A, 10V

Vgs(th) (Max) @ Id

3.6V @ 2.96mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 25V

FET Feature

Super Junction

Power Dissipation (Max)

481W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

DMT5015LFDF-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

9.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

902.7pF @ 25V

FET Feature

-

Power Dissipation (Max)

820mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFN2020 (2x2)

Package / Case

6-UDFN Exposed Pad

IXTX24N100

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

267nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8700pF @ 25V

FET Feature

-

Power Dissipation (Max)

568W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Recently Sold

L298P

L298P

STMicroelectronics

IC BRIDGE DRIVER PAR 20POWERSO

W25Q64JVSFIQ

W25Q64JVSFIQ

Winbond Electronics

IC FLASH 64M SPI 133MHZ 16SOIC

LT1118CST-2.5#TRPBF

LT1118CST-2.5#TRPBF

Linear Technology/Analog Devices

IC REG LIN 2.5V 800MA SOT223-3

NFM21PC105B1C3D

NFM21PC105B1C3D

Murata

CAP FEEDTHRU 1UF 20% 16V 0805

CBC3225T220KR

CBC3225T220KR

Taiyo Yuden

FIXED IND 22UH 780MA 351 MOHM

SMBJ7.0CA-E3/52

SMBJ7.0CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 7V 12V DO214AA

IPS5451S

IPS5451S

Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

XC6206P152MR-G

XC6206P152MR-G

Torex Semiconductor Ltd

1UA LOW QUIESCENT 3 TERMINAL, LO

MC9S12HZ256VAL

MC9S12HZ256VAL

NXP

IC MCU 16BIT 256KB FLASH 112LQFP

MAX531BCPD

MAX531BCPD

Maxim Integrated

IC DAC 12BIT V-OUT 14DIP

3386X-1-503

3386X-1-503

Bourns

TRIMMER 50K OHM 0.5W PC PIN SIDE

LM324N

LM324N

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14DIP