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IRFS644BYDTU_AS001

IRFS644BYDTU_AS001

For Reference Only

Part Number IRFS644BYDTU_AS001
PNEDA Part # IRFS644BYDTU_AS001
Description MOSFET N-CH 250V 14A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFS644BYDTU_AS001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberIRFS644BYDTU_AS001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFS644BYDTU_AS001, IRFS644BYDTU_AS001 Datasheet (Total Pages: 10, Size: 900.36 KB)
PDFIRFS644B_FP001 Datasheet Cover
IRFS644B_FP001 Datasheet Page 2 IRFS644B_FP001 Datasheet Page 3 IRFS644B_FP001 Datasheet Page 4 IRFS644B_FP001 Datasheet Page 5 IRFS644B_FP001 Datasheet Page 6 IRFS644B_FP001 Datasheet Page 7 IRFS644B_FP001 Datasheet Page 8 IRFS644B_FP001 Datasheet Page 9 IRFS644B_FP001 Datasheet Page 10

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IRFS644BYDTU_AS001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
FET Feature-
Power Dissipation (Max)43W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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