Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFS17N20D

IRFS17N20D

For Reference Only

Part Number IRFS17N20D
PNEDA Part # IRFS17N20D
Description MOSFET N-CH 200V 16A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFS17N20D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFS17N20D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFS17N20D, IRFS17N20D Datasheet (Total Pages: 12, Size: 144.77 KB)
PDFIRFS17N20DTRR Datasheet Cover
IRFS17N20DTRR Datasheet Page 2 IRFS17N20DTRR Datasheet Page 3 IRFS17N20DTRR Datasheet Page 4 IRFS17N20DTRR Datasheet Page 5 IRFS17N20DTRR Datasheet Page 6 IRFS17N20DTRR Datasheet Page 7 IRFS17N20DTRR Datasheet Page 8 IRFS17N20DTRR Datasheet Page 9 IRFS17N20DTRR Datasheet Page 10 IRFS17N20DTRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFS17N20D Datasheet
  • where to find IRFS17N20D
  • Infineon Technologies

  • Infineon Technologies IRFS17N20D
  • IRFS17N20D PDF Datasheet
  • IRFS17N20D Stock

  • IRFS17N20D Pinout
  • Datasheet IRFS17N20D
  • IRFS17N20D Supplier

  • Infineon Technologies Distributor
  • IRFS17N20D Price
  • IRFS17N20D Distributor

IRFS17N20D Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

FQPF3N80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

690pF @ 25V

FET Feature

-

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

IPW65R037C6FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

83.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

37mOhm @ 33.1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7240pF @ 100V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

IRLL110TR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

540mOhm @ 900mA, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 3.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IXFK26N60Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

SI5424DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

24mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

Recently Sold

MAX9011EUT+T

MAX9011EUT+T

Maxim Integrated

IC COMPARATOR TTL SOT23-6

T491X227K016AT

T491X227K016AT

KEMET

CAP TANT 220UF 10% 16V 2917

NSR0320MW2T1G

NSR0320MW2T1G

ON Semiconductor

DIODE SCHOTTKY 20V 1A SOD323

SMBJ12CA-TR

SMBJ12CA-TR

STMicroelectronics

TVS DIODE 12V 25.3V SMB

TCN4337M016R0070

TCN4337M016R0070

CAP TANT POLY 330UF 20% 16V 2924

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

MAX660ESA+

MAX660ESA+

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

TZMC15-GS08

TZMC15-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 500MW SOD80

LTC4364HS-2#PBF

LTC4364HS-2#PBF

Linear Technology/Analog Devices

IC SURGE STOPPER W/DIODE SMD

NL17SZ14DFT2G

NL17SZ14DFT2G

ON Semiconductor

IC INVERTER SCHMITT 1CH SC88A

SI4410DYPBF

SI4410DYPBF

Infineon Technologies

MOSFET N-CH 30V 10A 8-SOIC