Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR4105ZTR

IRFR4105ZTR

For Reference Only

Part Number IRFR4105ZTR
PNEDA Part # IRFR4105ZTR
Description MOSFET N-CH 55V 30A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR4105ZTR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR4105ZTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR4105ZTR, IRFR4105ZTR Datasheet (Total Pages: 11, Size: 206.98 KB)
PDFIRFU4105ZTRR Datasheet Cover
IRFU4105ZTRR Datasheet Page 2 IRFU4105ZTRR Datasheet Page 3 IRFU4105ZTRR Datasheet Page 4 IRFU4105ZTRR Datasheet Page 5 IRFU4105ZTRR Datasheet Page 6 IRFU4105ZTRR Datasheet Page 7 IRFU4105ZTRR Datasheet Page 8 IRFU4105ZTRR Datasheet Page 9 IRFU4105ZTRR Datasheet Page 10 IRFU4105ZTRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR4105ZTR Datasheet
  • where to find IRFR4105ZTR
  • Infineon Technologies

  • Infineon Technologies IRFR4105ZTR
  • IRFR4105ZTR PDF Datasheet
  • IRFR4105ZTR Stock

  • IRFR4105ZTR Pinout
  • Datasheet IRFR4105ZTR
  • IRFR4105ZTR Supplier

  • Infineon Technologies Distributor
  • IRFR4105ZTR Price
  • IRFR4105ZTR Distributor

IRFR4105ZTR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPZ40N04S58R4ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.4V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

13.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

771pF @ 25V

FET Feature

-

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8-32

Package / Case

8-PowerTDFN

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

21.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

54mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

803pF @ 25V

FET Feature

-

Power Dissipation (Max)

59W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

HTNFET-TC

Honeywell Aerospace

Manufacturer

Honeywell Aerospace

Series

HTMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

400mOhm @ 100mA, 5V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

4.3nC @ 5V

Vgs (Max)

10V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 28V

FET Feature

-

Power Dissipation (Max)

50W (Tj)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

-

Package / Case

-

ZXMN2B03E6TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1160pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-6

Package / Case

SOT-23-6

AOL1458

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2440pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

UltraSO-8™

Package / Case

3-PowerSMD, Flat Leads

Recently Sold

MT40A512M16LY-075:E

MT40A512M16LY-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

MAX999EUK+T

MAX999EUK+T

Maxim Integrated

IC COMP BEYOND-THE-RAILS SOT23-5

N25Q256A13ESF40G

N25Q256A13ESF40G

Micron Technology Inc.

IC FLASH 256M SPI 108MHZ 16SOP2

83023AMILF

83023AMILF

IDT, Integrated Device Technology

IC TRNSLTR UNIDIRECTIONAL 8SOIC

MBRA210LT3G

MBRA210LT3G

ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

SMBJ40A

SMBJ40A

Bourns

TVS DIODE 40V 64.5V SMB

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

ASPIAIG-F7030-4R7M-T

ASPIAIG-F7030-4R7M-T

Abracon

FIXED IND 4.7UH 9A 26.7MOHM

S2B-13-F

S2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMB

R5F2L3AACNFP#V0

R5F2L3AACNFP#V0

Renesas Electronics America

IC MCU 16BIT 96KB FLASH 100QFP

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD

S2G-13-F

S2G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB