Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR4105TR

IRFR4105TR

For Reference Only

Part Number IRFR4105TR
PNEDA Part # IRFR4105TR
Description MOSFET N-CH 55V 27A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR4105TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR4105TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR4105TR, IRFR4105TR Datasheet (Total Pages: 11, Size: 149.89 KB)
PDFIRFR4105TRR Datasheet Cover
IRFR4105TRR Datasheet Page 2 IRFR4105TRR Datasheet Page 3 IRFR4105TRR Datasheet Page 4 IRFR4105TRR Datasheet Page 5 IRFR4105TRR Datasheet Page 6 IRFR4105TRR Datasheet Page 7 IRFR4105TRR Datasheet Page 8 IRFR4105TRR Datasheet Page 9 IRFR4105TRR Datasheet Page 10 IRFR4105TRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR4105TR Datasheet
  • where to find IRFR4105TR
  • Infineon Technologies

  • Infineon Technologies IRFR4105TR
  • IRFR4105TR PDF Datasheet
  • IRFR4105TR Stock

  • IRFR4105TR Pinout
  • Datasheet IRFR4105TR
  • IRFR4105TR Supplier

  • Infineon Technologies Distributor
  • IRFR4105TR Price
  • IRFR4105TR Distributor

IRFR4105TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRFP044PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

TP0610K-T1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

185mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 15V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23pF @ 25V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

IPB160N04S203ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.9mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7-3

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

FQB34P10TM-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

33.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 16.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2910pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 155W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB36NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83.6nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2722pF @ 100V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

PI3740-00-LGIZ

PI3740-00-LGIZ

Vicor

DC DC CONVERTER 10-50V

8121-RC

8121-RC

Bourns

COMMON MODE CHOKE 1MH 20A 2LN TH

R5F2L3AACNFP#V0

R5F2L3AACNFP#V0

Renesas Electronics America

IC MCU 16BIT 96KB FLASH 100QFP

MPXV7002DP

MPXV7002DP

NXP

PRESSURE SENSOR DUAL PORT 8-SOP

AD7768BSTZ

AD7768BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

MT40A512M16LY-075:E

MT40A512M16LY-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

ARF445

ARF445

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

STM8AL3LE88TCY

STM8AL3LE88TCY

STMicroelectronics

IC MCU 8BIT 64KB FLASH 48LQFP

LTC4364HS-2#PBF

LTC4364HS-2#PBF

Linear Technology/Analog Devices

IC SURGE STOPPER W/DIODE SMD

S2G-13-F

S2G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB

IHLP2525CZER2R2M01

IHLP2525CZER2R2M01

Vishay Dale

FIXED IND 2.2UH 8A 20 MOHM SMD