Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR3910PBF

IRFR3910PBF

For Reference Only

Part Number IRFR3910PBF
PNEDA Part # IRFR3910PBF
Description MOSFET N-CH 100V 16A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,682
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR3910PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR3910PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR3910PBF Datasheet
  • where to find IRFR3910PBF
  • Infineon Technologies

  • Infineon Technologies IRFR3910PBF
  • IRFR3910PBF PDF Datasheet
  • IRFR3910PBF Stock

  • IRFR3910PBF Pinout
  • Datasheet IRFR3910PBF
  • IRFR3910PBF Supplier

  • Infineon Technologies Distributor
  • IRFR3910PBF Price
  • IRFR3910PBF Distributor

IRFR3910PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 25V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

R5005CNJTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TK39A60W,S4VX

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

38.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 19.4A, 10V

Vgs(th) (Max) @ Id

3.7V @ 1.9mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 300V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

RP1A090ZPTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

12mOhm @ 9A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 6V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MPT6

Package / Case

6-SMD, Flat Leads

NVMFS5C673NLAFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 25V

FET Feature

-

Power Dissipation (Max)

46W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

TK20P04M1,RQ(S

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

29mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

985pF @ 10V

FET Feature

-

Power Dissipation (Max)

27W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

ISL6124IRZA-T

ISL6124IRZA-T

Renesas Electronics America Inc.

IC POWER SUPPLY SEQUENCER 24QFN

LIS3MDLTR

LIS3MDLTR

STMicroelectronics

SENSOR MR I2C/SPI 12LGA

AMT102-V

AMT102-V

CUI

ROTARY ENCODER INCREMENT PROGPPR

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

B360B-13-F

B360B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMB

SMBJ5.0CA-13-F

SMBJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMB

ATMEGA32U2-AU

ATMEGA32U2-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

W25Q256JVCIQ

W25Q256JVCIQ

Winbond Electronics

IC FLASH 256M SPI 24TFBGA

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812