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IRFR2905ZTR

IRFR2905ZTR

For Reference Only

Part Number IRFR2905ZTR
PNEDA Part # IRFR2905ZTR
Description MOSFET N-CH 55V 42A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR2905ZTR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR2905ZTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR2905ZTR, IRFR2905ZTR Datasheet (Total Pages: 12, Size: 215.43 KB)
PDFIRFU2905Z Datasheet Cover
IRFU2905Z Datasheet Page 2 IRFU2905Z Datasheet Page 3 IRFU2905Z Datasheet Page 4 IRFU2905Z Datasheet Page 5 IRFU2905Z Datasheet Page 6 IRFU2905Z Datasheet Page 7 IRFU2905Z Datasheet Page 8 IRFU2905Z Datasheet Page 9 IRFU2905Z Datasheet Page 10 IRFU2905Z Datasheet Page 11

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IRFR2905ZTR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1380pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

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Power Dissipation (Max)

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Operating Temperature

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Series

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FET Type

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MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

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Operating Temperature

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Package / Case

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ON Semiconductor

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FET Type

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

205nC @ 20V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

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Power Dissipation (Max)

270W (Tc)

Operating Temperature

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Mounting Type

Surface Mount

Supplier Device Package

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Package / Case

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