Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR13N20DTR

IRFR13N20DTR

For Reference Only

Part Number IRFR13N20DTR
PNEDA Part # IRFR13N20DTR
Description MOSFET N-CH 200V 13A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,964
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR13N20DTR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR13N20DTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR13N20DTR, IRFR13N20DTR Datasheet (Total Pages: 11, Size: 131.39 KB)
PDFIRFR13N20DCTRLP Datasheet Cover
IRFR13N20DCTRLP Datasheet Page 2 IRFR13N20DCTRLP Datasheet Page 3 IRFR13N20DCTRLP Datasheet Page 4 IRFR13N20DCTRLP Datasheet Page 5 IRFR13N20DCTRLP Datasheet Page 6 IRFR13N20DCTRLP Datasheet Page 7 IRFR13N20DCTRLP Datasheet Page 8 IRFR13N20DCTRLP Datasheet Page 9 IRFR13N20DCTRLP Datasheet Page 10 IRFR13N20DCTRLP Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR13N20DTR Datasheet
  • where to find IRFR13N20DTR
  • Infineon Technologies

  • Infineon Technologies IRFR13N20DTR
  • IRFR13N20DTR PDF Datasheet
  • IRFR13N20DTR Stock

  • IRFR13N20DTR Pinout
  • Datasheet IRFR13N20DTR
  • IRFR13N20DTR Supplier

  • Infineon Technologies Distributor
  • IRFR13N20DTR Price
  • IRFR13N20DTR Distributor

IRFR13N20DTR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

R6020FNJTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2350pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AON7758_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

AlphaMOS

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.85mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

5200pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.2W (Ta), 34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (3.3x3.3)

Package / Case

8-PowerWDFN

STD18N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1240pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SI1050X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

1.34A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

86mOhm @ 1.34A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.6nC @ 5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

585pF @ 4V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

STD2HNK60Z-1

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.8Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

NRVBS3100T3G

NRVBS3100T3G

ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC

M25PX16-VMW6TG TR

M25PX16-VMW6TG TR

Micron Technology Inc.

IC FLASH 16M SPI 75MHZ 8SO

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

ISL4221EIRZ

ISL4221EIRZ

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 1/1 16QFN

ALS70A273NT250

ALS70A273NT250

KEMET

CAP ALUM 27000UF 20% 250V SCREW

MAX3237EAI+T

MAX3237EAI+T

Maxim Integrated

IC TRANSCEIVER FULL 5/3 28SSOP

SBR3U60P1-7

SBR3U60P1-7

Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

M29W200BB70N1

M29W200BB70N1

Micron Technology Inc.

IC FLASH 2M PARALLEL 48TSOP

AD8622ARZ

AD8622ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

ADP1864AUJZ-R7

ADP1864AUJZ-R7

Analog Devices

IC REG CTRLR BUCK TSOT23-6

MC33161DMR2G

MC33161DMR2G

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8MICRO