Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR13N15DPBF

IRFR13N15DPBF

For Reference Only

Part Number IRFR13N15DPBF
PNEDA Part # IRFR13N15DPBF
Description MOSFET N-CH 150V 14A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 22 - Feb 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR13N15DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR13N15DPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR13N15DPBF Datasheet
  • where to find IRFR13N15DPBF
  • Infineon Technologies

  • Infineon Technologies IRFR13N15DPBF
  • IRFR13N15DPBF PDF Datasheet
  • IRFR13N15DPBF Stock

  • IRFR13N15DPBF Pinout
  • Datasheet IRFR13N15DPBF
  • IRFR13N15DPBF Supplier

  • Infineon Technologies Distributor
  • IRFR13N15DPBF Price
  • IRFR13N15DPBF Distributor

IRFR13N15DPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPD60R360P7SE8228AUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

555pF @ 400V

FET Feature

-

Power Dissipation (Max)

41W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

CSD23285F5T

Texas Instruments

Manufacturer

Series

FemtoFET™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

35mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 4.5V

Vgs (Max)

-6V

Input Capacitance (Ciss) (Max) @ Vds

628pF @ 6V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-PICOSTAR

Package / Case

3-XFDFN

TK15J60U(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 10V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)

Package / Case

TO-3P-3, SC-65-3

IPI90R1K0C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id

3.5V @ 370µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 100V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPI045N10N3GXK

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™ 3

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

137A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8410pF @ 50V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

NP5Q128A13ESFC0E

NP5Q128A13ESFC0E

Micron Technology Inc.

IC PCM 128M SPI 66MHZ 16SO W

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

CNY17-4X007

CNY17-4X007

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6SMD

CAT93C46VI-GT3

CAT93C46VI-GT3

ON Semiconductor

IC EEPROM 1K SPI 2MHZ 8SOIC

ACS712ELCTR-05B-T

ACS712ELCTR-05B-T

Allegro MicroSystems, LLC

SENSOR CURRENT HALL 5A AC/DC

AUIRF2804S

AUIRF2804S

Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

1SMB5931BT3G

1SMB5931BT3G

ON Semiconductor

DIODE ZENER 18V 550MW SMB

74LCX574MTCX

74LCX574MTCX

ON Semiconductor

IC FF D-TYPE SNGL 8BIT 20TSSOP

RT9069-25GB

RT9069-25GB

Richtek USA Inc.

IC REG LINEAR 2.5V 200MA SOT23-5

RT0402BRD07100RL

RT0402BRD07100RL

Yageo

RES SMD 100 OHM 0.1% 1/16W 0402

UVR1E101MED1TA

UVR1E101MED1TA

Nichicon

CAP ALUM 100UF 20% 25V RADIAL

VESD05A1B-02V-G-08

VESD05A1B-02V-G-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 11V SOD523