Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR024NTRRPBF

IRFR024NTRRPBF

For Reference Only

Part Number IRFR024NTRRPBF
PNEDA Part # IRFR024NTRRPBF
Description MOSFET N-CH 55V 17A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR024NTRRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR024NTRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR024NTRRPBF Datasheet
  • where to find IRFR024NTRRPBF
  • Infineon Technologies

  • Infineon Technologies IRFR024NTRRPBF
  • IRFR024NTRRPBF PDF Datasheet
  • IRFR024NTRRPBF Stock

  • IRFR024NTRRPBF Pinout
  • Datasheet IRFR024NTRRPBF
  • IRFR024NTRRPBF Supplier

  • Infineon Technologies Distributor
  • IRFR024NTRRPBF Price
  • IRFR024NTRRPBF Distributor

IRFR024NTRRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds370pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPC60R520E6X1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SFT1342-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

62mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 20V

FET Feature

-

Power Dissipation (Max)

15W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK/TP

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IRFH3707TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.4mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

8.1nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

755pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (3x3)

Package / Case

8-PowerVDFN

IRLBA1304PPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

185A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

7660pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SUPER-220™ (TO-273AA)

Package / Case

TO-273AA

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

700mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

7A-8.000MAAE-T

7A-8.000MAAE-T

TXC

CRYSTAL 8.0000MHZ 12PF SMD

MPSA70RLRMG

MPSA70RLRMG

ON Semiconductor

TRANS PNP 40V 0.1A TO-92

DSC1001DI5-024.0000

DSC1001DI5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

SI4214DDY-T1-GE3

SI4214DDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

DLW5BSN191SQ2L

DLW5BSN191SQ2L

Murata

CMC 5A 2LN 190 OHM SMD

PZTA06

PZTA06

ON Semiconductor

TRANS NPN 80V 0.5A SOT-223

APHHS1005CGCK

APHHS1005CGCK

Kingbright

LED GREEN CLEAR CHIP SMD

1SMB5925BT3G

1SMB5925BT3G

ON Semiconductor

DIODE ZENER 10V 3W SMB

ACF451832-153-TD01

ACF451832-153-TD01

TDK

FILTER LC(T) SMD

LL4148

LL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD80

PEX8603-AB50NI G

PEX8603-AB50NI G

Broadcom

IC PCI EXPRESS SWITCH 136AQFN