Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFP150MPBF

IRFP150MPBF

For Reference Only

Part Number IRFP150MPBF
PNEDA Part # IRFP150MPBF
Description MOSFET N-CH 100V 42A TO-247AC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 18,216
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFP150MPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFP150MPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFP150MPBF Datasheet
  • where to find IRFP150MPBF
  • Infineon Technologies

  • Infineon Technologies IRFP150MPBF
  • IRFP150MPBF PDF Datasheet
  • IRFP150MPBF Stock

  • IRFP150MPBF Pinout
  • Datasheet IRFP150MPBF
  • IRFP150MPBF Supplier

  • Infineon Technologies Distributor
  • IRFP150MPBF Price
  • IRFP150MPBF Distributor

IRFP150MPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs36mOhm @ 23A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

The Products You May Be Interested In

ZVP0545ASTOA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

45mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ZXMN6A08GQTC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

80mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

459pF @ 40V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IRF3305

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3650pF @ 25V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PLUS-220SMD

Package / Case

PLUS-220SMD

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

4633pF @ 25V

FET Feature

-

Power Dissipation (Max)

211W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

FDS6910

FDS6910

ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

AS5263-HQFM

AS5263-HQFM

ams

SENSOR ANGLE 360DEG SMD

MF-R020

MF-R020

Bourns

PTC RESET FUSE 60V 200MA RADIAL

ADA4091-2ACPZ-RL

ADA4091-2ACPZ-RL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8LFCSP

IM03GR

IM03GR

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 5VDC

AD7305BRZ

AD7305BRZ

Analog Devices

IC DAC 8BIT V-OUT 20SOIC

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

XC6SLX100-3CSG484I

XC6SLX100-3CSG484I

Xilinx

IC FPGA 338 I/O 484CSBGA

LIS3MDLTR

LIS3MDLTR

STMicroelectronics

SENSOR MR I2C/SPI 12LGA

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W