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IRFIBE30GPBF

IRFIBE30GPBF

For Reference Only

Part Number IRFIBE30GPBF
PNEDA Part # IRFIBE30GPBF
Description MOSFET N-CH 800V 2.1A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFIBE30GPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFIBE30GPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFIBE30GPBF, IRFIBE30GPBF Datasheet (Total Pages: 7, Size: 1,401.37 KB)
PDFIRFIBE30G Datasheet Cover
IRFIBE30G Datasheet Page 2 IRFIBE30G Datasheet Page 3 IRFIBE30G Datasheet Page 4 IRFIBE30G Datasheet Page 5 IRFIBE30G Datasheet Page 6 IRFIBE30G Datasheet Page 7

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IRFIBE30GPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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